Optical properties of the deep Mn acceptor in GaN:Mn
Optical properties of the deep Mn acceptor in GaN:Mn
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DOI：
10.1063/1.1456544
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发表时间：
2002-03
影响因子：
4
通讯作者：
R. Korotkov;J. Gregie;B. Wessels
中科院分区：
文献类型：
--
作者：
R. Korotkov;J. Gregie;B. Wessels
研究了Mn掺杂外延GaN的光学和电学性能。低温光吸收测量表明存在具有良好分辨精细结构的 Mn 相关带。零声子线位于 1.418±0.002 eV，半峰全宽为 20±1 meV。观察到与锰相关的两种拟局域振动模式，能量分别为 hv1=20 和 hv2=73 meV。对轻掺杂 Mn 样品的深能级光谱测量表明，Mn 在 Ev+1.42 eV 处形成深受体能级。利用过渡金属的真空参考结合能模型和测量的Mn能级，计算出GaN的电子亲和势为3.4 eV，这与实验值非常吻合。
The optical and electrical properties of Mn-doped epitaxial GaN were studied. Low-temperature optical absorption measurements indicate the presence of a Mn-related band with a well-resolved fine structure. The zero-phonon line is at 1.418±0.002 eV with a full width at half maximum of 20±1 meV. Two pseudolocal vibrational modes associated with manganese were observed with energies of hv1=20 and hv2=73 meV. Deep-level optical spectroscopy measurements on lightly Mn-doped samples indicate that Mn forms a deep acceptor level at Ev+1.42 eV. Using the vacuum referred binding energy model for transition metals and the measured Mn energy level, the electron affinity of GaN is calculated to be 3.4 eV, which agrees well with experimental values.