Low Band Gap Cyanovinylene Polymers Based on Ethylenedioxythiophene
Low Band Gap Cyanovinylene Polymers Based on Ethylenedioxythiophene
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DOI:
10.1021/ma971290f
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发表时间:
1998-05
期刊:
影响因子:
5.5
通讯作者:
G. Sotzing;Christopher A. Thomas;J. Reynolds;P. Steel
中科院分区:
文献类型:
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作者:
G. Sotzing;Christopher A. Thomas;J. Reynolds;P. Steel
Low band gap (Eg) conjugated polymers1 have attracted attention due to their high visible light transmissivity in the conducting form (important for static charge dissipation applications) and their ability to be both p-and n-type doped (allowing their use in allpolymer-based batteries, supercapacitors, and dualpolymer electrochromic devices2 as both the cathodic and anodic materials). Within this family of polymers, poly (3, 4-ethylenedioxythiophene)(PEDOT) stands out for its optical properties (Eg) 1.6 eV), high stability in the conducting state, and propensity to multiple redox switches due to its ease of oxidation. 3 This last property can be attributed to the high effective HOMO energy level for the backbone.Previously, we and others have reported the synthesis and facile electrochemical polymerization of trans-1, 2-bis (3, 4-ethylenedioxythienyl)) vinylene (BEDOT-V). 4 Poly (BEDOT-V) was found to exhibit a low half-wave redox potential (E1/2, p) of ca. 0.0 V, making it a stable p-dopable conductor, and a reduced Eg relative to PEDOT of 1.4 eV. Unfortunately, the n-doping process for both PEDOT and poly (BEDOT-V) is particularly unstable. It has been shown that the incorporation of a cyano group onto the vinylene unit of electron rich poly (bis (heterocycle) vinylene) systems affords polymers with low Eg