C60-Nanowire Two-State Resistance Switching Based on Fullerene Polymerization/Depolymerization
C60-Nanowire Two-State Resistance Switching Based on Fullerene Polymerization/Depolymerization
复制标题
基于富勒烯聚合/解聚的C60纳米线二态电阻切换
DOI：
10.1021/acsanm.0c03144
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发表时间：
2020
影响因子：
5.9
通讯作者：
Tsukagoshi Kazuhito
中科院分区：
文献类型：
--
作者：
Umeta Yukiya;Suga Hiroshi;Takeuchi Mihiro;Zheng Shushu;Wakahara Takatsugu;Naitoh Yasuhisa;Tsukagoshi Kazuhito
富勒烯被认为是实现下一代纳米电子学的关键元素。然而，尽管已经开发了使用扫描隧道显微镜（STM）的单富勒烯开关操作，但是仍然需要具有电极的结构架构作为器件来取得进展。因为富勒烯小于1.0 nm，这适用于STM方法，即使使用最新的器件电极制造技术，亚纳米尺寸仍然太小。本文介绍了利用自组装富勒烯纳米线驱动单富勒烯开关的原理性实验。在液-液界面处合成的富勒烯C60纳米线（C60 NW）表现出负微分电阻（NDR）和C60分子间局部聚合和解聚产生的双态电阻开关。C60纳米线经过电子束（EB）辐照诱导导电形成初始导电路径的预处理后进行电学表征，经过预处理的C60纳米线的电流增加了100倍以上，而生长态的C60纳米线在20 V偏压下表现出纳安级电流。的电流-电压特性表现出非线性的电流增加和负阻，导致可重复的双态电阻开关偏置电压调制下。非线性电流的增加，NDR，和电阻开关解释的本地能量控制的电流诱导的连接和断开的C60分子，导致隧道电流调制向一个单一的元素C60的纳米材料开关功能。
Fullerene has been expected to realize next generation nanoelectronics as a key element. However, although single-fullerene switch operation using scanning tunneling microscope (STM) has been developed, the structural architecture with electrodes is still needed to make progress as devices. Because the fullerenes are smaller than 1.0 nm, which is suitable for the STM approach, the subnanometer size is still too small, even with the latest device electrode fabrication techniques. Here we present the principle experiment on a self-assembling fullerene nanowire to drive single-fullerene switch. A fullerene C60-nanowire (C60NW), which was synthesized at a liquid–liquid interface, exhibited negative differential resistance (NDR) and two-state resistance switching generated by local polymerization and depolymerization among the C60molecules. A C60NW was electrically characterized after a preset treatment to induce C60NW conductivity by electron-beam (EB) irradiation to form an initial conduction path. A current though the C60NW increased more than 100-fold after the preset treatment, whereas an as-grown C60NW exhibited a nanoampere-level current under a 20 V bias voltage. The current–voltage characteristics showed a nonlinear current increase and NDR, leading to reproducible two-state resistance switching under bias-voltage modulation. The nonlinear current increase, the NDR, and the resistance switching are explained by local energy control of the current-induced connection and disconnection of C60molecules, leading to tunneling current modulation toward a single element of C60in a nanomaterial switching function.