Postgrowth Annealing Effects on Structural, Optical, and Electrical Properties of beta-MoO3 Films Grown by Molecular Beam Epitaxy
Postgrowth Annealing Effects on Structural, Optical, and Electrical Properties of beta-MoO3 Films Grown by Molecular Beam Epitaxy
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生长后退火对分子束外延生长的 β-MoO3 薄膜的结构、光学和电学性能的影响
DOI：
10.1109/imfedk.2014.6867068
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
Mitsuaki Yano
中科院分区：
文献类型：
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作者：
Shinji Yagi;Masayuki Matsuo;Kazuto Koike;Yoshiyuki Harada;Shigehiko Sasa;Mitsuaki Yano
研究了分子束外延生长后退火对c面蓝宝石衬底上低温生长的β相MoO 3薄膜的结构、光学和电学性能的影响。通过在600°C氧气气氛中退火，薄膜由β相完全转变为热力学稳定的α相。另一方面，通过在氮气氛中在相同温度下退火，将氧缺陷MoO 3-x畴引入到膜中。后一种膜在可见光区表现出高吸光度，并伴随着电阻率的降低。
We report the postgrowth annealing effects on the structural, optical, and electrical properties of a low-temperature grown β-phase MoO3film on a c-plane sapphire substrate by molecular beam epitaxy. By employing the postgrowth annealing at 600°C in an oxygen atmosphere, the film was completely transformed from β-phase to thermo-dynamically stable α-phase. On the other hand, oxygen deficient MoO3-xdomains were introduced into the film by the annealing at the same temperature in a nitrogen atmosphere. The latter film exhibited a high absorbance in a visible region accompanied by a decrease in resistivity.