HREM investigation of twinning in very high dose phosphorus ion-implanted silicon
HREM investigation of twinning in very high dose phosphorus ion-implanted silicon
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高剂量磷离子注入硅中孪晶的 HREM 研究
DOI：
10.1007/bf00616823
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发表时间：
1986
期刊：
影响因子：
--
通讯作者：
S. Amelinckx
中科院分区：
文献类型：
--
作者：
H. Bender;A. Veirman;J. Landuyt;S. Amelinckx
讨论了通过高分辨率电子显微镜 (HREM)、电子衍射、光学衍射和图像模拟对极高剂量磷离子注入 (011) 硅片中的孪晶进行研究的结果。除了(111)面上的孪晶(即Σ3边界)和Σ9边界之外，在高分辨率图像中还经常观察到显示三重周期性的区域。结果表明，这些区域的衍射图案和图像可以通过孪生晶粒的重叠来解释。排除了硅多型体存在的解释。讨论了在斜 (111) 平面上对孪晶进行成像的可能性。
Results are discussed of a study by means of high-resolution electron microscopy (HREM), electron diffraction, optical diffraction and image simulation of twinning in very high dose phosphorus ion-implanted (011) silicon wafers. Except for twins on the (111) planes (i. e.,Σ3 boundaries) andΣ9 boundaries, also regions showing, in the high-resolution image, a threefold periodicity are frequently observed. It is demonstrated that the diffraction pattern and the image of such regions can be explained by the overlap of twinned grains. Interpretation by the presence of polytypes of silicon is excluded. The possibility to image twins on inclined (111) planes is discussed.