Effect of grit shape and crystal structure on damage in diamond wire scribing of silicon
Effect of grit shape and crystal structure on damage in diamond wire scribing of silicon
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DOI：
10.1111/jace.14732
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发表时间：
2017-04-01
影响因子：
3.9
通讯作者：
Arcona, Chris
中科院分区：
文献类型：
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作者：
Kumar, Arkadeep;Melkote, Shreyes N.;Arcona, Chris
对光伏硅晶片的固定磨料切片的基本理解对于产生具有优越的表面质量和机械强度的低成本晶片至关重要。为了了解钻石线锯工艺，本文研究了通过实际钻石线上的磨料砂岩对单晶和多晶硅的涂抹。具体而言，研究了毅力形状和硅晶体结构对所得表面形态，地下损伤以及发生延性到脆性过渡的临界深度的影响。结果表明，表面裂纹取决于砂砾的形状。在多晶硅中涂在谷物和双边界上的涂鸦会影响所得的表面形态，粒度比晶粒内部相对于晶粒边界而产生的效果比晶粒内部的晶体学取向更大。地下损伤取决于砂砾形状和晶体结构。通过分析理想化的砂砾形状产生的应力状态，解释了单晶硅涂鸦的延展性到脆性过渡的临界深度的差异。
Fundamental understanding of the fixed abrasive slicing of photovoltaic silicon wafers is crucial for producing low-cost wafers with superior surface quality and mechanical strength. With the goal of understanding the diamond wire sawing process, this paper investigates the scribing of mono- and multi-crystalline silicon by the abrasive grits on an actual diamond wire. Specifically, the effects of grit shape and silicon crystal structure on the resulting surface morphology, subsurface damage, and the critical depth of cut at which ductile-to-brittle transition occurs are investigated. Results show that surface cracking depends on the grit shape. Scribing across the grain and twin boundaries in multi-crystalline silicon impacts the resulting surface morphology, with grit shape producing a greater effect than crystallographic orientation in the grain interior relative to the grain boundary. Subsurface damage depends on the grit shape and crystal structure. Differences in the critical depth of cut for ductile-to-brittle transition in scribing of mono-crystalline silicon are explained via analysis of the stress state produced by idealized grit shapes.