MAXIMUM METALLIC RESISTANCE IN THIN WIRES
MAXIMUM METALLIC RESISTANCE IN THIN WIRES
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DOI：
10.1103/physrevlett.39.1167
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发表时间：
1977-01-01
影响因子：
8.6
通讯作者：
THOULESS, DJ
中科院分区：
文献类型：
--
作者：
THOULESS, DJ
认为电子态应局域在任何杂质电阻大于10 kΩ的导线中。在足够低的温度下，这将导致电阻增加T− 2，因为需要一维声子或激发电子来引起局域态之间的跃迁。对观察这种效应所需的温度进行了估计。
It is argued that electronic states should be localized in any wire whose impurity resistance is greater than about 10 kΩ. At sufficiently low temperatures this will lead to a T− 2 increase in resistance because one-dimensional phonons or excited electrons are needed to cause transitions between localized states. An estimate is made of the temperature needed to observe this effect.