CMOS-compatible multi-band plasmonic TE-pass polarizer
CMOS-compatible multi-band plasmonic TE-pass polarizer
复制标题
DOI：
10.1364/oe.26.030292
复制
发表时间：
2018-11-12
期刊：
影响因子：
3.8
通讯作者：
Plant, David V.
中科院分区：
文献类型：
--
作者：
Abadia, Nicolas;Saber, Md. Ghulam;Plant, David V.
数值分析了一种能工作在O、E、S、C、L和U波段的CMOS兼容等离子体TE通偏振器。该设备是基于一个集成的混合等离子体激元波导（HPW）与分段金属设计。分段金属将避免TM模式的传播，限制在HPW的槽中，而TE基模将通过。TE模式不受金属分割的影响，因为它被限制在HPW的核心中。分段金属的概念可以在具有HPW作为电路的部分之间的连接波导的等离子体电路中以及在具有连接电路的不同部分的条形或平板波导的硅光子电路中被利用。使用三维FDTD模拟，它表明，对于5.5 μ m的长度的偏振消光比优于20 dB和插入损耗小于1.7 dB的所有光通信波段。(c)根据OSA开放获取出版协议的条款，2018年美国光学学会
A CMOS-compatible plasmonic TE-pass polarizer capable of working in the O, E, S, C, L, and U bands is numerically analyzed. The device is based on an integrated hybrid plasmonic waveguide (HPW) with a segmented metal design. The segmented metal will avoid the propagation of the TM mode, confined in the slot of the HPW, while the TE fundamental mode will pass. The TE mode is not affected by the metal segmentation since it is confined in the core of the HPW. The concept of the segmented metal can be exploited in a plasmonic circuit with HPWs as the connecting waveguides between parts of the circuit and in a silicon photonics circuit with strip or slab waveguides connecting the different parts of the circuit. Using 3D FDTD simulations, it is shown that for a length of 5.5 mu m the polarization extinction ratios are better than 20 dB and the insertion losses are less than 1.7 dB over all the optical communication bands. (c) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement