Thin Film Growth of Pb(Zr, Ti)O3 by Photoenhanced Metalorganic Chemical Vapor Deposition Using NO2
Thin Film Growth of Pb(Zr, Ti)O3 by Photoenhanced Metalorganic Chemical Vapor Deposition Using NO2
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利用 NO2 光增强金属有机化学气相沉积法生长 Pb(Zr, Ti)O3 薄膜
DOI：
10.1143/jjap.32.4074
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发表时间：
1993
影响因子：
1.5
通讯作者：
Tadashi Shiosaki Tadashi Shiosaki
中科院分区：
文献类型：
--
作者：
M. Shimizu;T. Katayama;Masataka Sugiyama Masataka Sugiyama;Tadashi Shiosaki Tadashi Shiosaki
以Pb（C2 H5）4、Zr（O-t-C4 H9）4、Ti（O-i-C3 H7）4和NO2为原料，采用光增强金属有机化学气相沉积（photo-MOCVD）方法成功地制备了Pb（Zr，Ti）O3铁电薄膜。在高于535°C的衬底温度下获得了四方和菱方Pb（Zr，Ti）O3薄膜。观察到光照射对生长行为的显著影响。所观察到的效果包括增加的生长速率和膜组成比的Zr/（Zr+Ti），和在电气性能的变化。只有在[Zr]/（[Zr]+[Ti]）的低气体供给比下才观察到由光照射引起的Pb（Zr，Ti）O3薄膜的生长温度的降低。光沉积Pb（Zr，Ti）O3薄膜具有良好的铁电性能、漏电流特性和台阶覆盖性。
Ferroelectric Pb(Zr, Ti)O3 thin films were successfully grown by photoenhanced metalorganic chemical vapor deposition (photo-MOCVD), using Pb(C2H5)4, Zr(O-t-C4H9)4, Ti(O-i-C3H7)4 and NO2. Both tetragonal and rhombohedral Pb(Zr, Ti)O3 thin films were obtained at substrate temperatures higher than 535°C. Significant effects of photoirradiation on the growth behavior were observed. The observed effects included an increase in the growth rate and film compositional ratio of Zr/(Zr+Ti), and a change in the electrical properties. A decrease in the growth temperature of the Pb(Zr, Ti)O3 films caused by photoirradiation was observed only when the films were grown at low gas supply ratios of [Zr]/([Zr]+[Ti]). The photodeposited Pb(Zr, Ti)O3 films obtained showed good ferroelectric properties, good leakage characteristic and good step coverage.