Growth Rate of Fine Grains Formed by Diffusion Induced Recrystallization in Ni Layer of Cu/Ni/Cu Diffusion Couples
Growth Rate of Fine Grains Formed by Diffusion Induced Recrystallization in Ni Layer of Cu/Ni/Cu Diffusion Couples
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Cu/Ni/Cu扩散偶Ni层中扩散诱导再结晶形成细晶粒的生长速率
DOI：
10.2320/matertrans1989.39.218
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发表时间：
1998
期刊：
影响因子：
--
通讯作者：
Tsutomu T. Mori
中科院分区：
文献类型：
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作者：
Yasuhiko Kawanami;Masahiko Nakano;M. Kajihara;Tsutomu T. Mori
对Ni（Cu）系扩散诱导再结晶进行了实验研究。符号Ni（Cu）表示Cu原子扩散到纯Ni或二元Ni-Cu相中。由具有相同晶向的纯Cu单晶和纯Ni多晶样品组成的Cu/Ni/Cu扩散偶在923和1023 K下退火1.8 × 103 ~ 1.76 × 105 s。发现Cu在Ni相中的渗透速率比从体积扩散评估的速率大三个数量级。这种不寻常的快速渗透是由于。在923和1023 K退火的扩散偶中，均观察到界面处的Ni相发生相变。实验结果表明，在923和1023 K下，随退火时间t的增加，退火区的厚度I分别按l=4.9 × 10 - 8（t/t0）0.41和l=1.8 × 10 - 7（t/t0）0.37的关系增加。这里，I和t分别以m和s为单位测量，并且t 0是单位时间1 s。用Li和Hillert提出的动力学方程进行分析可以定量地解释观测结果。
Diffusion induced recrystallization (DIR) in the Ni(Cu) system was experimentally studied. The notation Ni(Cu) means that Cu atoms diffuse into a pure Ni or binary Ni-Cu phase. The Cu/Ni/Cu diffusion couples consisting of pure Cu single crystals with the same crystallographic orientation and a pure Ni polycrystalline specimen were annealed at 923 and 1023 K for various times between 1.8 × 10 3 and 1.76 × 10 5 s. The penetration of Cu in the Ni phase was found to occur at rates three orders of magnitude greater than the ones evaluated from the volume diffusion. This unusually rapid penetration is due to DIR. DIR was observed to take place only in the Ni phase from the interfaces in all the diffusion couples annealed at 923 and 1023 K. The observations indicate that the thickness I of the DIR region increases with increasing annealing time t according to the relationships l=4.9 × 10 -8 (t/t 0 ) 0.41 and l=1.8 × l0 -7 (t/t 0 ) 0.37 at 923 and 1023 K, respectively. Here, I and t are measured in m and s, respectively, and t 0 is unit time, 1 s. The analysis using the kinetic equation proposed by Li and Hillert could account for the observations quantitatively.