Criteria of crack initiation at edge of interface between thin films in opening and sliding modes for an advanced LSI
Criteria of crack initiation at edge of interface between thin films in opening and sliding modes for an advanced LSI
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先进LSI开模和滑动模式下薄膜界面边缘裂纹萌生准则
DOI：
10.1299/kikaia.69.1368
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
M. Shiratori
中科院分区：
文献类型：
--
作者：
T. Shibutani;T. Tsuruga;Qiang Yu;M. Shiratori
亚微米薄膜的界面断裂可分为两种类型：张开型和滑动型。与断裂模式相对应，界面强度应定量评价，但难以施加模式控制载荷。在这项研究中，裂纹萌生在薄膜之间的LSI的界面边缘的标准进行了检查下的开放模式和滑动模式，分别。不仅提出了开度的评价方法，而且提出了滑动模态的评价方法。对Si衬底上的Si_3N_4/Cu/TaN薄膜进行了测试。在两种模式下，裂纹都在Si 3 N4（厚度：100 nm）/Cu（厚度：400 nm）界面处开始。应力分析表明，在开模态和滑动模态下，σxy和τxy的奇异场分别出现在边缘附近。根据断裂力学的基本概念，对两种模式的界面断裂韧性进行了评价。滑动模式的断裂韧性小于张开模式的断裂韧性，是薄膜间界面强度的一个特征。
The interface fracture between sub-micron films can be classified into two types: opening mode and sliding mode. Corresponding to fracture mode, the interface strength should be evaluated quantitatively, but it is difficult to apply mode-controlled load. In this study, the criteria of crack initiation at the edge of interface between thin films for an LSI are examined under opening mode and sliding mode, respectively. Not only the evaluation method for opening mode but also that for sliding mode is proposed. The Si3N4/Cu/TaN films on a Si substrate is tested. The crack initiates at the Si3N4 (thickness: 100 nm)/Cu (thickness: 400 nm) interface in both modes. Stress analysis reveals that singularity fields of σxy and τxy appear near the edge in opening mode and sliding mode, respectively. On the basis of fracture mechanics concept, the interface fracture toughness of both modes are evaluated. The fracture toughness of sliding mode is smaller than that of opening mode and it is a characteristic of the interface strength between thin films.