Epitaxial recrystallization of HDPE-quenched ultrathin films on oriented iPP substrates
Epitaxial recrystallization of HDPE-quenched ultrathin films on oriented iPP substrates
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DOI：
10.1002/(sici)1099-0488(19970715)35:9
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发表时间：
1997-07
期刊：
影响因子：
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通讯作者：
Shouke Yan;J. Petermann;Decai Yang
中科院分区：
文献类型：
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作者：
Shouke Yan;J. Petermann;Decai Yang
用透射电子显微镜研究了高密度聚乙烯（HDPE）在高取向等规聚丙烯（iPP）基体上的再结晶行为。通过明场观察和电子衍射获得的结果表明，当在低于125 ℃的温度下退火取向的iPP基底上的HDPE淬灭膜时，只有少量的HDPE在iPP基底上以[001]（HDPE）//[001]（iPP）重结晶，而在高于125 ℃的温度下退火HDPE淬灭膜，所有的HDPE微晶在具有[001]（HDPE）//[101]（iPP）的iPP衬底上外延重结晶。(C)John Wiley & Sons，Inc.
The recrystallization behavior of high-density polyethylene (HDPE) on the highly oriented isotactic polypropylene (iPP) substrates at temperatures below the melting temperature of HDPE has been investigated by means of transmission electron microscopy. The results obtained by the bright-field observation and the electron diffraction show that upon annealing the HDPE-quenched films on the oriented iPP substrates at temperatures below 125 degrees C, only a small amount of HDPE recrystallizes on the iPP substrate with [001](HDPE)//[001](iPP), while annealing the HDPE-quenched films at temperatures above 125 degrees C, all of the HDPE crystallites recrystallize epitaxially on the iPP substrate with [001](HDPE)//[101](iPP). (C) 1997 John Wiley & Sons, Inc.