A new short-anoded IGBT with high emission efficiency
A new short-anoded IGBT with high emission efficiency
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DOI：
10.1088/1674-4926/33/11/114003
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发表时间：
2012-11
影响因子：
5.1
通讯作者：
Weizhong Chen;Zhang Bo;Zehong Li;Ren Min;Zhaoji Li
中科院分区：
文献类型：
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作者：
Weizhong Chen;Zhang Bo;Zehong Li;Ren Min;Zhaoji Li
提出了一种新型双发射极短阳极绝缘栅双极晶体管（SA-IGBT）。在导通状态下，新结构表现出极高的发射效率。此外，采用短接触阳极，由于电子的拥挤，进一步提高了空穴发射效率。该结构的正向压降VF在电流密度100A/cm2时为1.74V。与传统NPT IGBT (1.94 V)、分段阳极IGBT (SA-NPN 2.1 V)和传统SA-IGBT (2.33 V)相比，VF分别降低了10%、17%和30%。此外，与 SA-IGBT 相比，未检测到 NDR。在关断状态下，漂移区有一个用于提取过量载流子的通道。该结构的关断损耗 Eoff 为 8.64 mJ/cm2。与传统NPT IGBT（15.3 mJ/cm2）、SA-NPN IGBT（12.8 mJ/cm2）和SA-IGBT（12.1 mJ/cm2）相比，Eoff分别降低了43.7%、32%和28%。
A novel short-anoded insulated-gate bipolar transistor (SA-IGBT) with double emitters is proposed. At the on-state, the new structure shows extraordinarily high emission efficiency. Moreover, with a short-contacted anode, it further enhances the hole emission efficiency because of the crowding of the electrons. The forward voltage drop VF of this structure is 1.74 V at a current density 100 of A/cm2. Compared to the conventional NPT IGBT (1.94 V), segment-anode IGBT (SA-NPN 2.1 V), and conventional SA-IGBT (2.33 V), VF decreased by 10%, 17% and 30%, respectively. Furthermore, no NDR has been detected comparing to the SA-IGBT. At the off-state, there is a channel for extracting excessive carriers in the drift region. The turn-off loss Eoff of this proposed structure is 8.64 mJ/cm2. Compared to the conventional NPT IGBT (15.3 mJ/cm2), SA-NPN IGBT (12.8 mJ/cm2), and SA-IGBT (12.1 mJ/cm2), Eoff decreased by 43.7%, 32% and 28%, respectively.