Synthesis of Ti-Al-Si-N nanocomposite films using liquid injection PECVD from alkoxide precursors
Synthesis of Ti-Al-Si-N nanocomposite films using liquid injection PECVD from alkoxide precursors
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DOI：
10.1016/j.actamat.2005.12.034
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发表时间：
2006-05
期刊：
影响因子：
9.4
通讯作者：
Y. S. Li;S. Shimada;H. Kiyono;A. Hirose
中科院分区：
文献类型：
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作者：
Y. S. Li;S. Shimada;H. Kiyono;A. Hirose
采用液体注入等离子体增强化学气相沉积技术，从相应的醇盐前体中合成了一系列 Ti-Al-Si 系氮化物薄膜，温度约为 750°C。通过X射线光电子能谱、X射线衍射、扫描和透射电子显微镜对薄膜的组成和结构进行了表征。在各自的情况下形成非晶SiNx和晶态AlN和TiN薄膜，而含SiNx的(Ti/Al)Si-N复合薄膜表现出由非晶SiNx基体和嵌入的TiN、AlN或TiAlN纳米晶体组成的两相微观结构。富硅纳米复合薄膜表现出优异的高温抗氧化性。在900℃空气中暴露2小时后，氮化物薄膜中没有观察到元素偏析，其结构基本不受影响。其基本机制是根据非晶SiNx界面相的高化学惰性以及因此具有独特纳米结构的复合氮化物薄膜的高热稳定性来讨论的。
A series of nitride films of the Ti–Al–Si system have been synthesized at about 750°C using the liquid injection plasma-enhanced chemical vapor deposition technique from corresponding alkoxide precursors. The composition and structure of the films were characterized by X-ray photoelectron spectroscopy, X-ray diffraction, and scanning and transmission electron microscopy. Amorphous SiNxand crystalline AlN and TiN films were formed in their individual cases, while the SiNx-containing (Ti/Al)Si–N composite films showed a two-phase microstructure consisting of amorphous SiNxmatrix and embedded TiN, AlN, or TiAlN nanocrystals. The Si-rich nanocomposite films demonstrated superior high-temperature oxidation resistance. After two hours of air exposure at 900°C, no elemental segregation was observed in the nitride films and their structures remained basically unaffected. The fundamental mechanism is discussed in terms of the chemically high inertness of amorphous SiNxinterfacial phase and thereby the high thermal stability of the composite nitride films with unique nanostructures.