Characterization of yttria-stabilized zirconium oxide buffer layers for high-temperature superconductor thin films
Characterization of yttria-stabilized zirconium oxide buffer layers for high-temperature superconductor thin films
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高温超导薄膜用氧化钇稳定氧化锆缓冲层的表征
DOI：
10.1063/1.342068
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发表时间：
1988
影响因子：
3.2
通讯作者：
D. Laughlin
中科院分区：
文献类型：
--
作者：
J. Lee;T. Schlesinger;A. Stamper;M. Migliuolo;D. Greve;D. Laughlin
我们采用透射电子显微镜和X射线衍射来研究溅射沉积在硅上的氧化钇稳定的氧化锆（YSZ）的性质。结果表明，所沉积的YSZ膜是多晶的（晶粒尺寸7-20 nm），晶粒之间具有微孔。这些薄膜在800、950和1100 °C的温度下退火1小时，消除了微孔，并导致晶粒尺寸在更高的退火温度下从20 nm增加到50 nm。YSZ膜的特定纹理由沉积条件的细节控制。还介绍了用这些缓冲层在硅上淀积的超导薄膜的电阻率测量。
We have employed transmission electron microscopy and x‐ray diffraction to investigate the properties of yttria‐stabilized zirconium oxide (YSZ) sputter deposited on silicon. It is shown that the as‐deposited YSZ films are polycrystalline (grain size 7–20 nm) with microvoids between grains. Anneals of these films at temperatures of 800, 950, and 1100 °C for 1 h eliminate the microvoids and cause the grain size to increase from 20 to 50 nm at the higher anneal temperatures. Particular texture of the YSZ film is controlled by the details of the deposition conditions. Resistivity measurements of superconducting films deposited on silicon using these buffer layers are also presented.