Pressure-induced phase transitions in the topological crystalline insulator SnTe and its comparison with semiconducting SnSe: Raman and first-principles studies
Pressure-induced phase transitions in the topological crystalline insulator SnTe and its comparison with semiconducting SnSe: Raman and first-principles studies
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DOI：
10.1103/physrevb.101.155202
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发表时间：
2020-04
影响因子：
3.7
通讯作者：
S. Pal;Raagya Arora;S. Roychowdhury;L. Harnagea;K. Saurabh;Sandhya Shenoy;D. Muthu;K. Biswas;U. Waghmare;A. Sood
中科院分区：
文献类型：
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作者：
S. Pal;Raagya Arora;S. Roychowdhury;L. Harnagea;K. Saurabh;Sandhya Shenoy;D. Muthu;K. Biswas;U. Waghmare;A. Sood
