Improvement on p-type performance of CVD diamond by isolating thin heavily-boron-doped layer as innumerable islands

Improvement on p-type performance of CVD diamond by isolating thin heavily-boron-doped layer as innumerable islands
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通过将薄重硼掺杂层隔离为无数岛来改善 CVD 金刚石的 p 型性能

DOI:
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发表时间:
2011
期刊:
影响因子:
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通讯作者:
T. Ito
T. Ito
中科院分区:
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文献类型:
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作者:
O. Maida;M. Aono;T. Ito

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