Minimization of SiO2/4H-SiC (0001) Interface State Density by Low-Temperature Post-Oxidation-Annealing in Wet Ambient after Nitrogen Passivation
Minimization of SiO2/4H-SiC (0001) Interface State Density by Low-Temperature Post-Oxidation-Annealing in Wet Ambient after Nitrogen Passivation
复制标题
氮钝化后在湿环境中通过低温后氧化退火最小化 SiO2/4H-SiC (0001) 界面态密度
DOI：
10.1149/08602.0061ecst
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Hirai Hirohisa
中科院分区：
文献类型：
--
作者：
Kita Koji;Nishida Mizuki;Sakuta Ryota;Hirai Hirohisa
在4H-SiC(0001)衬底上，通过无气氛下的后氧化和H2O气氛下的低温氮化两种热处理工艺的顺序组合，得到了界面态密度最小、近界面氧化物陷阱较少的MOS界面。应调整H2O退火条件，将SiO_2的额外生长量限制在~lt；1毫升以下，以最小化界面缺陷密度。
The MOS interface with minimized interface state density and less near-interface oxide traps was demonstrated on 4H-SiC (0001) by the sequential combination of two kinds of annealing processes after conventional dry oxidation: the post-oxidation annealing in NO ambient and the post-nitridation annealing in H2O ambient at low temperature. The H2O annealing conditions should be tuned to limit the amount of the additional growth of SiO2 to< 1 ML to minimize the interface defect density.