Photorefractive effect at 633 nm in semi‐insulating cadmium sulfide
Photorefractive effect at 633 nm in semi‐insulating cadmium sulfide
复制标题
半绝缘硫化镉在 633 nm 处的光折变效应
DOI：
10.1063/1.105702
复制
发表时间：
1991
影响因子：
4
通讯作者：
S. Scott
中科院分区：
文献类型：
--
作者：
P. Tayebati;J. Kumar;S. Scott
在低光功率下首次观察到硫化镉的光折变效应。在633 nm处，无外加场时测得的最大增益系数为0.3 cm−1。响应时间随强度呈次线性变化，且与光栅间距无关。在最大强度为80mw /cm2时，获得的响应时间为0.9 ms。在可见光范围内工作的光折变材料中，光折变灵敏度最大。
We report the first observation of the photorefractive effect in cadmium sulfide at low optical power. The maximum gain coefficient measured with no applied field at 633 nm is 0.3 cm−1. The response time scales sublinearly with intensity and is independent of grating spacing. At a maximum intensity of 80 mW/cm2, a response time of 0.9 ms is obtained. The photorefractive sensitivity is the largest among photorefractive material operating in the visible range.