Resistive switching at the high quality metal/insulator interface in Fe3O4/SiO2/α-FeSi2/Si stacking structure
Resistive switching at the high quality metal/insulator interface in Fe3O4/SiO2/α-FeSi2/Si stacking structure
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DOI：
10.1063/1.5048827
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发表时间：
2018-10-01
影响因子：
4
通讯作者：
Nakamura, Yoshiaki
中科院分区：
文献类型：
--
作者：
Ishibe, Takafumi;Kurokawa, Tsubasa;Nakamura, Yoshiaki
由无处不在的元素组成的Fe3O4基薄膜在电阻开关方面具有广阔的应用前景。一般来说，这种薄膜的缺点是关断/导通电阻比低。我们在基于Fe3O4的堆积结构中获得了最高的电阻率，该堆积结构包括具有高质量界面的薄的SiO_2层。为了制备堆积结构，在硅衬底上有意形成的α-FeSi2层上外延生长了氧化铁薄膜，由于α-FeSi2层的作用：阻止硅原子从衬底通过界面扩散，从而形成了高质量的外延界面。高质量的Fe_3O_4/α-FeSi(2)界面用低氧压退火工艺成功地在界面上插入了薄的SiO_2层。得到的Fe3O4薄膜/SiO(2)层/α-FeSi2层的堆积结构表现出电阻开关行为，其电阻比接近140，这是Fe(3)O(4)材料中的最高值。这一高值来自于高阻状态下的高得多的电阻，因为堆叠结构具有薄的二氧化硅绝缘层，具有高质量的界面，没有缺陷作为漏电位置工作。这意味着克服了传统Fe3O4基薄膜电阻率低的缺点，并证明了实现无稀有金属电阻随机存取存储器的可能性。由AIP出版公司出版。
Fe3O4-based films composed of ubiquitous elements are promising for resistive switching. In general, the disadvantage of this film is the low Off/On resistance ratio. We achieved the highest resistance ratio in a Fe3O4 -based stacking structure including a thin SiO2 layer with a high quality interface. For fabrication of the stacking structure, Fe oxide films were epitaxially grown on the intentionally formed alpha-FeSi2 layers on Si substrates, where the high quality epitaxial interfaces were formed owing to the alpha-FeSi2 layer role: blocking of Si atom diffusion from the substrate through the interface. The high quality Fe3O4/alpha-FeSi(2 )interfaces were oxidized by the low O-2 pressure annealing process to succeed in inserting thin SiO2 layers at the interfaces. The resulting stacking structure of the Fe3O4 film/SiO(2 )layer/alpha-FeSi2 layer showed the resistive switching behavior with the resistance ratio of similar to 140 which is the highest value of Fe(3)O(4)materials. This high value comes from much higher resistance in the high resistive state because the stacking structure has a thin SiO2 insulator layer with high quality interfaces without defects working as leakage sites. This means overcoming the disadvantage of conventional Fe3O4 -based films, low resistance ratio, and demonstrates the possibility of realization for rare-metal-free resistance random access memory. Published by AIP Publishing.