THE EFFECT OF SURFACE SPECIES ON THE PHOTOLUMINESCENCE OF POROUS SILICON
THE EFFECT OF SURFACE SPECIES ON THE PHOTOLUMINESCENCE OF POROUS SILICON
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DOI：
10.1007/bf02671222
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发表时间：
1994-04-01
影响因子：
2.1
通讯作者：
WHITE, JM
中科院分区：
文献类型：
--
作者：
LI, KH;TSAI, C;WHITE, JM
浸泡在酒精中的多孔硅的光致发光表现出蓝移和强度相对于干燥，阳极氧化晶片显着下降。然而，当浸没的样品用紫外（UV）光处理几分钟时，光致发光（PL）峰向更长的波长移动。傅里叶变换红外光谱表明，烷氧基表面物种和硅氢化物物种背键氧原子上出现的UV处理的样品。此外，光致发光特性和表面物种的紫外处理的样品可以恢复到那些作为阳极氧化的晶片浸泡在氢氟酸。这些结果指出了表面化学在多孔硅发光过程中的重要性。
The photoluminescence of porous Si immersed in alcohol exhibits a blue shift and a marked decrease in intensity relatively to dry, as-anodized wafers. However, when the immersed samples are treated with ultraviolet (UV) light for a few minutes, the photoluminescence (PL) peak shifts to longer wavelength. Fourier transform infrared spectroscopy reveals that alkoxy surface species and silicon hydride species backbonded to oxygen atoms appear on the UV-treated samples. Furthermore, the PL characteristics and surface species of the UV-treated samples can be recovered to those of as-anodized wafers by dipping in hydrofluoric acid. These results point out the importance of surface chemistry in the luminescence process of porous Si.