High temperature thermoelectric properties of TiNiSn-based half-Heusler compounds
High temperature thermoelectric properties of TiNiSn-based half-Heusler compounds
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DOI：
10.1016/j.intermet.2006.08.008
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发表时间：
2007-03-01
期刊：
影响因子：
4.4
通讯作者：
Mishima, Yoshinao
中科院分区：
文献类型：
--
作者：
Kim, Sung-Wng;Kimura, Yoshisato;Mishima, Yoshinao
一类具有 MgAgAs 结构类型的 TiNiSn half-Heusler 化合物金属间化合物作为潜在的高温热电材料目前受到关注。三元TiNiSn化合物表现出良好的热电性能、高塞贝克系数和低电阻率。本研究报道了Ti位点上Hf合金化、Ni位点上Pt和Pd合金化以及Sn位点上Sb掺杂的影响，以优化TiNiSn基化合物的热电性能。此外，为了实现低导热率，使用粉末冶金技术来制造化合物。这些努力导致热压 (Ti0.95Hf0.05)Ni(Sn0.99Sb0.01) 样品在 770 K 下的无量纲品质因数 ZT 为 0.78，具有大功率因数 (4.1 mW/mK(2))，这使得这些材料对于潜在的发电应用非常有吸引力。 (c) 2006 Elsevier Ltd. 保留所有权利。
A class of intermetallics of TiNiSn half-Heusler compound with MgAgAs structure type is currently of interest as a potential high temperature thermoelectric material. The ternary TiNiSn compound has showed promising thermoelectric properties, a high Seebeck coefficient and low electrical resistivity. The present study reports the effect of Hf alloying on Ti site, Pt and Pd alloying on Ni site, and Sb doping on Sn site for the optimization of thermoelectric properties of TiNiSn-based compounds. Also, to achieve a low thermal conductivity, a powder metallurgy technique is used for the fabrication of the compounds. These efforts result in the dimensionless figure of merit, ZT as 0.78 for the hot-pressed (Ti0.95Hf0.05)Ni(Sn0.99Sb0.01) sample at 770 K with a large power factor (4.1 mW/mK(2)), which makes these materials very attractive for potential power generation applications. (c) 2006 Elsevier Ltd. All rights reserved.