Slip and the effect of 4He at the 3He-silicon interface.
Slip and the effect of 4He at the 3He-silicon interface.
复制标题
3He-硅界面处的滑移和 4He 的影响。
DOI：
10.1103/physrevlett.67.334
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发表时间：
1991
影响因子：
8.6
通讯作者：
J. Parpia
中科院分区：
文献类型：
--
作者：
S. M. Tholen;J. Parpia
我们目前的测量滑动正常3 He之间的高度抛光的硅板安装在扭转振荡器。由此得到的纯正常的3 He的有效粘度是不符合简单的滑移理论，并显示出的特点，以前crossedonly与表面层的4 He本。我们还观察到了镜面反射的发病诱导的4 He。这种发作发生在4He的2个单层已经完成之后，并且可以与4He的超流性相关联
We present measurements of the slip of normal 3 He contained between a pair of highly polished silicon plates mounted on a torsional oscillator. The resulting effective viscosity of pure normal 3 He is not consistent with simple slip theory and shows characteristics previously observedonly with a surface layer of 4 He present. We have also observed the onset of specularity induced by the addition of 4 He. This onset occurs after 2 monolayers of 4 He have been completed and can be associated with superfluidity of the 4 He