Cyclic voltammetry at shallow recessed microdisc electrode: Theoretical and experimental study
Cyclic voltammetry at shallow recessed microdisc electrode: Theoretical and experimental study
复制标题
DOI：
10.1016/j.jelechem.2009.01.030
复制
发表时间：
2009-04-15
影响因子：
4.5
通讯作者：
Lindner, Erno
中科院分区：
文献类型：
--
作者：
Guo, Jidong;Lindner, Erno
本研究主要研究浅凹微盘电极的循环伏安行为。特别是关于从科特雷利行为到稳态行为的转变。对镶嵌和凹陷的微盘电极的扩散进行了模拟。从CV的形状来看，对于给定的半径和潜在扫描速率，从平面扩散到半球扩散的转变时间随着凹槽的增加而呈现最小值。通过将模拟的CV值与实验结果进行拟合，验证了理论预测。通过模拟，定义并确定了镶嵌和凹陷微盘电极的无量纲过渡扫描速率。(C)2009爱思唯尔B.V.保留所有权利。
This study focuses on the cyclic voltammetry behavior at shallow recessed microdisc electrode. particularly on the transition from cottrellian behavior to steady state behavior. Diffusion to the inlaid and recessed microdisc electrode is simulated. From the shape of the CVs, for a given radius and potential scan rate, the transition time from planar diffusion to hemispherical diffusion presents a minimum as the recess increases. Theoretical prediction was confirmed by fitting the simulated CVs with experimental results. Dimensionless transition scan rate has been defined and determined by simulation for inlaid and recessed microdisc electrodes. (C) 2009 Elsevier B.V. All rights reserved.