Origin of electric dipoles formed at high-k/SiO2 interface
Origin of electric dipoles formed at high-k/SiO2 interface
复制标题
DOI：
10.1063/1.3110968
复制
发表时间：
2009-03-30
影响因子：
4
通讯作者：
Toriumi, Akira
中科院分区：
文献类型：
--
作者：
Kita, Koji;Toriumi, Akira
提出了一个在高k/SiO2界面形成偶极子的物理起源模型。在我们的模型中，氧原子在高k/SiO2界面的面密度差被认为是偶极子形成的内在起源。氧从高氧密度一侧向低氧密度一侧的运动决定了界面偶极子的方向。界面处的键能弛豫解释了为什么氧密度差是氧运动的驱动力。我们的模型能够预测候选栅极的偶极子方向，包括那些迄今尚未报道的。
A model for the physical origin of the dipole formed at high-k/SiO2 interface is proposed. In our model, an areal density difference of oxygen atoms at high-k/SiO2 interface is considered as an intrinsic origin of the dipole formation. The oxygen movement from higher-oxygen-density side to a lower-oxygen-density one will determine the direction of interface dipole. The bonding energy relaxation at the interface explains why the oxygen density difference is the driving force of the oxygen movement. Our model enables the prediction of the dipole directions for candidate gate dielectrics, including those so far not reported.