<inline-formula> <tex-math notation="LaTeX">$400~mu $ </tex-math></inline-formula>m Diameter APD OEIC in <inline-formula> <tex-math notation="LaTeX">$0.35~mu ext{m}$ </tex-math></inline-formula> BiCMOS
<inline-formula> <tex-math notation="LaTeX">$400~mu $ </tex-math></inline-formula>m Diameter APD OEIC in <inline-formula> <tex-math notation="LaTeX">$0.35~mu ext{m}$ </tex-math></inline-formula> BiCMOS
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<inline-formula> <tex-math notation="LaTeX">$400~mu $ </tex-math></inline-formula>m 直径 APD OEIC <inline-formula> <tex-math notation="LaTeX
DOI:
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发表时间:
2016
影响因子:
2.6
通讯作者:
H. Zimmermann
中科院分区:
文献类型:
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作者:
T. Jukic;B. Steindl;H. Zimmermann
An optoelectronic integrated circuit (OEIC) with a 400 μm diameter avalanche photodiode (APD) is present. The OEIC is designed for use in systems of optical wireless communication and communication over plastic optical fiber. The used APD reaches a quantum efficiency of 81.7% without an anti-reflection coating. In combination with the 0.35 μm bipolar complementary metal-oxide-semiconductor circuit, a data rate of 2 Gb/s can be reached with a sensitivity of -30.6 dBm (bit error rate 10-9) at a wavelength of 675 nm. The OEIC occupies an area of 960 μm × 1540 μm and is supplied with 3.3 V with a current consumption of 74 mA.