A 200-GHz Inductively Tuned VCO With-7-dBm Output Power in 130-nm SiGe BiCMOS
A 200-GHz Inductively Tuned VCO With-7-dBm Output Power in 130-nm SiGe BiCMOS
复制标题
DOI：
10.1109/tmtt.2013.2279779
复制
发表时间：
2013-10-01
影响因子：
4.3
通讯作者：
Heydari, Payam
中科院分区：
文献类型：
--
作者：
Chiang, Pei-Yuan;Momeni, Omeed;Heydari, Payam
提出了一种新型的(亚)太赫兹频率电感调谐拓扑结构的压控振荡器(VCO)。该调谐技术基于在基极退化晶体管的发射极节点处看到的可变电感。由于晶体管跨导通过偏置电流可调，可变电感具有高品质因数和大调谐范围。该压控振荡器采用0.13mum SiGe BiCMOS工艺制作，在201.5 GHz下的调谐范围为3.5%，输出功率为-7.2dBm。VCO的直流功耗为30 mW，导致DC-RF功率效率高达0.6%，品质因数(FOM(T))为-165，这是迄今为止报道的任何硅基VCO在此频率范围内最高的FOM。为了演示调谐技术的功能，实现并测试了三个不同振荡频率的压控振荡器原型，其中一个工作在222.7-229 GHz范围内。
A highly efficient push-push voltage-controlled oscillator (VCO) with a new inductive frequency tuning topology for (sub) terahertz frequencies is presented. The tuning technique is based on a variable inductance seen at the emitter node of a base-degenerated transistor. The variable inductor exhibits high quality factor and high tuning range due to the tunable transistor transconductance via bias current. Fabricated in a 0.13-mu m SiGe BiCMOS process, the VCO achieves a tuning range of 3.5% and an output power of -7.2 dBm at 201.5 GHz. The dc power consumption of the VCO is 30 mW, resulting in a high dc to RF power efficiency of 0.6% and a figure of merit (FoM(T)) of -165, which is the highest FoM for any silicon-based VCO reported to date at this frequency range. To demonstrate the functionality of the tuning technique, three VCO prototypes at different oscillation frequencies, including one operating in the 222.7-229-GHz range, are implemented and measured.