Poly(3-hexylthiophene)/polystyrene (P3HT/PS) blends based organic field-effect transistor ammonia gas sensor
Poly(3-hexylthiophene)/polystyrene (P3HT/PS) blends based organic field-effect transistor ammonia gas sensor
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DOI：
10.1016/j.snb.2015.11.005
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发表时间：
2016-03-31
影响因子：
8.4
通讯作者：
Yu, Junsheng
中科院分区：
文献类型：
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作者：
Han, Shijiao;Zhuang, Xinming;Yu, Junsheng
以聚3-己基噻吩基(P3HT)/聚苯乙烯(PS)为半导体层，制备了基于有机场效应晶体管(OFET)的氨(NH3)气体传感器。PS基质中P3HT的最佳组成为1.6wt%，对不同浓度的NH3具有最好的耐受性，与纯P3HT(8wt%)的性能相当。结果表明，在50ppm和5ppm NH3下，饱和电流的百分比响应值分别为52%和16%。研究还表明，在NH3气体作用下，薄膜的场效应迁移率发生了显著的变化。通过对共混膜的形貌和OFET传感器电学特性的分析，发现P3HT/PS共混膜与NH3有更多的界面相互作用，即使在低浓度范围内也能更有效地检测NH3。此外，PS基质可以防止气体直接扩散到半导体/电介质界面，这有利于P3HT/PS共混型ET传感器的选择性。此外，PS的传感性能还与PS的溶剂和相对分子质量有关。此外，在常压下放置40天后，对OFET传感器的环境稳定性进行了测试，发现具有混合半导体层的器件表现出了更好的稳定性。(C)2015爱思唯尔B.V.保留所有权利。
Ammonia (NH3) gas sensors based on organic field-effect transistor (OFET) using poly(3-hexylthiophene) (P3HT) blended with polystyrene (PS) as a semiconductor layer were fabricated. An optimized composition of 1.6 wt% P3HT in PS matrix exhibited the best performance to various concentrations of NH3, which is comparable to that of pure P3HT (8 wt%). The results showed the percentage responses of saturation current were 52% and 16% under 50 ppm and 5 ppm NH3, respectively. Also, it showed that there was a remarkable shift in the field-effect mobility after exposed to NH3 gas. By analyzing the morphologies of blend films and the electrical characteristics of OFET sensors, it was found that the film of P3HT blended with PS has more interface to interact with NH3, resulting in more efficient detection to NH3 even in the range of low concentration. Besides, the PS matrix would prevent the gas from diffusing into the semiconductor/dielectric interface directly, which was beneficial to the selectivity of P3HT/PS blend OFET sensor. Moreover, the sensing property was related to the solvents and molecular weight of PS. In addition, the environmental stability of OFET sensors was measured after storing the sensors under ambient atmosphere for 40 days, and the device with the blend semiconducting layer exhibited the superior stability. (C) 2015 Elsevier B.V. All rights reserved.