Electron scatterings in selectively doped n-AlGaAs∕GaAs heterojunctions with high density self-assembled InAlAs antidots
Electron scatterings in selectively doped n-AlGaAs∕GaAs heterojunctions with high density self-assembled InAlAs antidots
复制标题
DOI：
10.1063/1.2996414
复制
发表时间：
2008-10
影响因子：
4
通讯作者：
T. Kawazu;H. Sakaki
中科院分区：
文献类型：
--
作者：
T. Kawazu;H. Sakaki
研究了在GaAs沟道附近嵌入高密度InAlAs反点的选择性掺杂n-AlGaAs ScinGaAs异质结中二维电子的散射过程。在两个样品中测量迁移率μ作为电子浓度Ns的函数，其中In 1 −xAlxAs反点以不同的Al含量（x ≤ 0.75和0.5）生长。发现μ的Ns依赖性强烈依赖于嵌入InAlAs点的Al含量x，尽管它们的形状和密度几乎相同。实验数据很好地解释了理论模型的基础上的InAlAs点层的表面轮廓。
The scattering processes of two-dimensional electrons are studied in selectively doped n-AlGaAs∕GaAs heterojunctions where high density InAlAs anti dots are embedded in the vicinity of the GaAs channel. Mobilities μ are measured as a function of the electron concentrations Ns in two samples where the In1−xAlxAs antidots are grown with different Al contents (x∼0.75 and 0.5). It is found that the Ns dependence of μ is strongly dependent on the Al content x of the embedded InAlAs dots, although their shapes and densities are almost same. The experimental data are well explained by theoretical models based on the surface profiles of the InAlAs dot layers.