Influence of an InGaN superlattice pre-layer on the performance of semi-polar (11-22) green LEDs grown on silicon.
Influence of an InGaN superlattice pre-layer on the performance of semi-polar (11-22) green LEDs grown on silicon.
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InGaN 超晶格预层对硅上生长的半极性 (11-22) 绿光 LED 性能的影响。
DOI：
10.1038/s41598-020-69609-4
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发表时间：
2020
影响因子：
4.6
通讯作者：
Zhao X
中科院分区：
文献类型：
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作者：
Zhao X
众所周知，在生长作为发光二极管 (LED) 有源区的 InGaN/GaN 多量子阱 (MQW) 之前，插入单个 InGaN 底层或 InGaN 超晶格 (SLS) 结构（均具有低 InN 含量）作为预层至关重要。到目前为止，该生长方案在III族氮化物LED的面内衬底生长方面取得了巨大成功，但尚未应用于任何其他取向III族氮化物LED的生长。在本文中，我们将这种生长方案应用于半极性（11-22）绿色LED的生长，并研究了SLS预层对在图案化（113）硅基板上生长的半极性（11-22）绿色LED的光学性能的影响。我们的结果表明，具有 SLS 预层的半极性 LED 的内量子效率和光输出均有所提高，这与 c 面对应物相似。然而，性能提升并不像 c-planecase 中那么显着。这是因为 SLS 预层还为半极性引入了额外的失配位错，但不是作为非辐射复合中心的 c 平面。
It is well-known that it is crucial to insert either a single InGaN underlayer or an InGaN superlattice (SLS) structure (both with low InN content) as a pre-layer prior to the growth of InGaN/GaN multiple quantum wells (MQWs) served as an active region for a light-emitting diode (LED). So far, this growth scheme has achieved a great success in the growth of III-nitride LEDs onc-planesubstrates, but has not yet been applied in the growth of any other orientated III-nitride LEDs. In this paper, we have applied this growth scheme in the growth of semi-polar (11–22) green LEDs, and have investigated the impact of the SLS pre-layer on the optical performance of semi-polar (11–22) green LEDs grown on patterned (113) silicon substrates. Our results demonstrate that the semi-polar LEDs with the SLS pre-layer exhibit an improvement in both internal quantum efficiency and light output, which is similar to theirc-planecounterparts. However, the performance improvement is not so significant as in thec-planecase. This is because the SLS pre-layer also introduces extra misfit dislocations for the semi-polar, but not thec-planecase, which act as non-radiative recombination centres.