A New Route to Low Resistance Contacts for Performance‐Enhanced Organic Electronic Devices
A New Route to Low Resistance Contacts for Performance‐Enhanced Organic Electronic Devices
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DOI：
10.1002/admi.201300130
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发表时间：
2014-08
影响因子：
5.4
通讯作者：
P. Schulz;Tobias Schäfer;C. Zangmeister;Christian Effertz;D. Meyer;D. Mokros;R. V. van Zee;R. Mazzarello;M. Wuttig
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文献类型：
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作者：
P. Schulz;Tobias Schäfer;C. Zangmeister;Christian Effertz;D. Meyer;D. Mokros;R. V. van Zee;R. Mazzarello;M. Wuttig
半导体/电极界面上电荷载流子注入的势垒是影响有机晶体管和光电器件性能的关键参数，而电极材料的功函数对势垒的大小起着重要的决定作用。我们提出了一种新的化学途径，通过用n，n -二烷基二硫代氨基甲酸酯自组装单层功能化金表面来制造具有低功函数的金属表面。紫外光发射光谱测量表明，该表面修饰可获得3.2 eV±0.1 eV的功函数。电子结构计算表明，这种低功函数是由堆积密度、沿N - C键的极化以及与化学吸附相关的电荷重排造成的。我们证明了这些单层功能化的电极显着提高了有机薄膜晶体管的性能，并且可以潜在地用于有机光伏电池的电荷选择触点。
The barrier to charge carrier injection across the semiconductor/electrode interface is a key parameter in the performance of organic transistors and optoelectronic devices, and the work function of the electrode material plays an important role in determining the size of this barrier. We present a new, chemical route for making metal surfaces with low work functions, by functionalizing gold surfaces with self‐assembled monolayers of n,n‐dialkyl dithiocarbamates. Ultraviolet photoemission spectroscopy measurements show that work functions of 3.2 eV ± 0.1 eV can be achieved using this surface modification. Electronic structure calculations reveal that this low work function is a result of the packing‐density, polarization along the N‐C bond, and charge rearrangement associated with chemisorption. We demonstrate that electrodes functionalized with these monolayers significantly improve the performance of organic thin‐film transistors and can potentially be employed in charge selective contacts for organic photovoltaics.