Epitaxial growth of corundum-structured wide band gap III-oxide semiconductor thin films
Epitaxial growth of corundum-structured wide band gap III-oxide semiconductor thin films
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DOI：
10.1016/j.jcrysgro.2014.02.032
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发表时间：
2014-09-01
影响因子：
1.8
通讯作者：
Kaneko, Kentaro
中科院分区：
文献类型：
--
作者：
Fujita, Shizuo;Kaneko, Kentaro
我们报告的基本问题和前景的菱形刚玉结构的III-氧化物（III-O）合金系统构成的α-M2 O3（M=金属元素）材料。在蓝宝石（alpha-Al_2 O_3）衬底上成功地外延生长α-Ga_2 O_3和α-In_2 O_3使得能够生长α-（Al，Ga，In）（2）O_3半导体合金，实现了从3.8 eV（实验值）到8.8 eV的“带隙工程”。过渡金属刚玉结构的氧化物（M=Cr，Fe，V，Ti）可以与α-（Al，Ga，In）（2）O-3半导体合金合金化，从而实现“功能工程”，即定制材料功能。刚玉结构的III-O合金将有助于未来的新型多功能器件。(C)2014爱思唯尔有限公司版权所有。
We report fundamental issues and prospects of the rhombohedral corundum-structured III-oxide (III-O) alloy system constituted with alpha-M2O3 (M=metal element) materials. Successful epitaxial growth of alpha-Ga2O3 and alpha-In2O3 on sapphire (alpha-Al2O3) substrates has enabled the growth of alpha-(Al,Ga,In)(2)O-3 semiconductor alloys, achieving the "band gap engineering" from 3.8 eV (an experimental value) to 8.8 eV. Transition-metal corundum-structured oxides (M=Cr, Fe, V, Ti) can be alloyed with the alpha-(Al,Ga,In)(2)O-3 semiconductor alloys, leading to "function engineering", that is, to tailor the materials functions. The corundum-structured III-O alloys will contribute to novel multifunctional devices in the future. (C) 2014 Elsevier B.V. All rights reserved.