Continuous-wave operation above room temperature of GaSb-based laser diodes grown on Si
Continuous-wave operation above room temperature of GaSb-based laser diodes grown on Si
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DOI：
10.1063/1.3644983
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发表时间：
2011-09-19
影响因子：
4
通讯作者：
Tournie, E.
中科院分区：
文献类型：
--
作者：
Reboul, J. R.;Cerutti, L.;Tournie, E.
我们研究了特别设计的在硅衬底上外延生长的基于gasb的激光二极管。在实验装置的限制下，我们演示了这些激光二极管在2 pm附近发射至35℃的连续波操作，输出功率为几mW/facet。我们的研究结果为直接单片HI-V/Si集成开辟了道路。(C) 2011年美国物理研究所。(doi: 10.1063/1.3644983)
We have investigated specifically designed GaSb-based laser diodes epitaxially grown on a Si substrate. We demonstrate continuous-wave operation of these laser diodes emitting near 2 pm up to 35 degrees C with several mW/facet output powers, limited by our experimental setup. Our results open the way to direct monolithic HI-V/Si integration. (C) 2011 American Institute of Physics. [doi:10.1063/1.3644983]