Control of threshold voltage by gate metal electrode in molybdenum disulfide field-effect transistors
Control of threshold voltage by gate metal electrode in molybdenum disulfide field-effect transistors
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DOI：
10.1063/1.4979610
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发表时间：
2017-03
影响因子：
4
通讯作者：
T. Kawanago;S. Oda
中科院分区：
文献类型：
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作者：
T. Kawanago;S. Oda
本研究报道了在二硫化钼场效应晶体管（fet）中通过工程设计栅极金属电极来控制阈值电压（Vth）。栅极堆的制造工艺包括在高工作功能金属上沉积氧化铝（AlOx），随后通过浸没法形成自组装单层（SAM）。使用铂（Pt）金属作为栅极，由于紧密堆积的SAM，在界面处存在低密度的陷阱，证明了正Vth为0.15 V。拉曼光谱分析表明，转移的二硫化钼具有多层结构。与铝栅极相比，铂栅极在正方向上的V值位移约为1 V。这第v次位移与Pt和Al栅金属电极的功函数的差异是一致的。本研究中采用的低温工艺可以组装不同的材料，包括Pt金属，沉积的AlOx和有机SA。
This study reports the control of threshold voltage (Vth) by engineering a gate metal electrode in molybdenum disulfide (MoS2) field-effect transistors (FETs). The fabrication process for gate stacks involves the deposition of aluminum oxides (AlOx) on a high-work-function metal and the subsequent formation of a self-assembled monolayer (SAM) by an immersion method. A positive Vth of 0.15 V was demonstrated using a platinum (Pt) metal as a gate electrode accompanied by a low density of traps at the interface owing to the close-packed SAM. Raman spectroscopy revealed that the transferred MoS2 has a multi-layer structure. The Pt gate electrode exhibits a Vth shift of about 1 V in the positive direction compared with the aluminum (Al) gate electrode. This Vth shift is consistent with the difference in the work function of Pt and Al gate metal electrodes. The low–temperature process employed in this study makes it possible to assemble dissimilar materials including the Pt metal, deposited AlOx, and organic SA...