Characterization of dislocations in GaN layer grown on 4-inch Si(111) with AlGaN/AlN strained layer superlattices
Characterization of dislocations in GaN layer grown on 4-inch Si(111) with AlGaN/AlN strained layer superlattices
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DOI：
10.7567/jjap.55.05fb08
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发表时间：
2016-04
影响因子：
1.5
通讯作者：
Y. Sugawara;Y. Ishikawa;A. Watanabe;M. Miyoshi;T. Egawa
中科院分区：
文献类型：
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作者：
Y. Sugawara;Y. Ishikawa;A. Watanabe;M. Miyoshi;T. Egawa
在4-in上生长的氮化镓层中的位错。采用水平金属-有机化学气相沉积系统对具有AlGaN/AlN应变层超晶格的Si（111）进行了透射电镜和扫描透射电镜表征。观察区未见单纯螺旋位错，有混合型位错和边缘位错。氮化镓层中的位错密度从底部（~ 2 × 1010 cm−2）下降到顶部（~ 6 × 109 cm−2）。部分位错从c轴倾斜，在GaN层中观察到半环位错。平面视图弱光束暗场分析表明，位错倾斜是由爬升和滑动运动引起的。
Dislocations in a GaN layer grown on 4-in. Si(111) with AlGaN/AlN strained layer superlattices using a horizontal metal–organic chemical vapor deposition system were characterized by transmission electron microscopy and scanning transmission electron microscopy. Pure screw dislocations were not found in the observed area but mixed and edge dislocations were found. The dislocation density in the GaN layer decreased from the bottom (∼2 × 1010 cm−2) to the top (∼6 × 109 cm−2). Some dislocations were inclined from the c-axis, and half-loop dislocations were observed in the GaN layer. Plan-view weak-beam dark-field analysis indicated that the dislocation inclination was caused by climb and glide motions.