Graphene on Ir(111) characterized by angle-resolved photoemission
Graphene on Ir(111) characterized by angle-resolved photoemission
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DOI：
10.1103/physrevb.84.075427
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发表时间：
2011-08-05
影响因子：
3.7
通讯作者：
Vobornik, Ivana
中科院分区：
文献类型：
--
作者：
Kralj, Marko;Pletikosic, Ivo;Vobornik, Ivana
角分辨光电子能谱（ARPES）被广泛用于表征Ir（111）石墨烯的电子结构与制备过程的关系。ARPES的研究结果表明，单独或与化学气相沉积相结合的程序升温生长导致石墨烯显示尖锐的电子带。的狄拉克锥的光电发射强度作为一个功能的石墨烯面积的增加进行监测。电子特征的莫尔超结构中存在的系统，即，微型间隙和复制带进行检查，并作为强大的功能，以评估石墨烯的均匀性。分析了π带的整体色散。最后，通过光子能量的变化，展示了π和σ带强度的相对变化。
Angle-resolved photoelectron spectroscopy (ARPES) is extensively used to characterize the dependence of the electronic structure of graphene on Ir(111) on the preparation process. ARPES findings reveal that temperature-programmed growth alone or in combination with chemical vapor deposition leads to graphene displaying sharp electronic bands. The photoemission intensity of the Dirac cone is monitored as a function of the increasing graphene area. Electronic features of the moire superstructure present in the system, namely, minigaps and replica bands are examined and used as robust features to evaluate graphene uniformity. The overall dispersion of the pi band is analyzed. Finally, by the variation of photon energy, relative changes of the pi and sigma band intensities are demonstrated.