Voltage sensor gating charge transfer in a hERG potassium channel model.
Voltage sensor gating charge transfer in a hERG potassium channel model.
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DOI:
10.1016/j.bpj.2014.10.001
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发表时间:
2014-11-18
影响因子:
3.4
通讯作者:
Dempsey, Christopher E.
中科院分区:
文献类型:
--
作者:
Colenso, Charlotte K.;Cao, Yang;Sessions, Richard B.;Hancox, Jules C.;Dempsey, Christopher E.
Relaxation of a hERG K+ channel model during molecular-dynamics simulation in a hydrated POPC bilayer was accompanied by transitions of an arginine gating charge across a charge transfer center in two voltage sensor domains. Inspection of the passage of arginine side chains across the charge transfer center suggests that the unique hydration properties of the arginine guanidine cation facilitates charge transfer during voltage sensor responses to changes in membrane potential, and underlies the preference of Arg over Lys as a mobile charge carrier in voltage-sensitive ion channels.
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