Electron transport via a few-dopant cluster in the presence of counter-dopants in silicon nanowire transistors
Electron transport via a few-dopant cluster in the presence of counter-dopants in silicon nanowire transistors
复制标题
DOI：
10.35848/1882-0786/abf404
复制
发表时间：
2021-05-01
影响因子：
2.3
通讯作者：
Moraru, Daniel
中科院分区：
文献类型：
--
作者：
Pandy, Chitra;Prabhudesai, Gaurang;Moraru, Daniel
通过第一性原理和半经验模拟，研究了电子在带有 n (+) 静电掺杂源极/漏极的门控硅纳米线晶体管中通过两侧为受主的施主簇的传输。通过室温下的电特性探测局域态密度谱，以澄清受体原子对少供体团簇能量状态引起的改变。研究发现，位于少供体团簇和先导团之间的受体原子主要改变团簇电势，对其能谱引入轻微的畸变。当受主原子移向硅纳米线表面时，结果变化很小，并且系统地取决于受主的数量。
Electron transport through a few-donor cluster flanked by acceptors is studied by first-principles and semi-empirical simulations in gated Si-nanowire transistors with n (+) electrostatically-doped source/drain. Local density-of-states spectra are probed by electrical characteristics at room temperature for clarifying modifications induced by acceptor-atoms on the energy states of the few-donor cluster. It is found that acceptor-atoms located between the few-donor cluster and the leads mainly shift the cluster potential, introducing a minor distortion to its energy spectrum. The results change only weakly as the acceptor-atoms are moved towards the Si nanowire surface, and systematically depend on the number of acceptors.