Simple square pulses for implementing spike-timing-dependent plasticity in phase-change memory
Simple square pulses for implementing spike-timing-dependent plasticity in phase-change memory
复制标题
用于在相变存储器中实现尖峰时序相关可塑性的简单方波脉冲
DOI：
10.1002/pssr.201510150
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
Xiangshui Miao
中科院分区：
文献类型：
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作者：
Yingpeng Zhong;Yi Li;Lei Xu;Xiangshui Miao
相变记忆（PCM）是一种很有前途的人工突触候选者。一个紧凑的操作方法来实现低功耗的突触功能是构建大规模神经形态系统的关键。在这里，我们提出了一个平方尖峰策略，实现尖峰时间依赖可塑性（STDP）的PCM。基于PCM中的热积累效应，调制前尖峰和后尖峰的时间间隔导致不同的热生成和耗散条件，这导致具有不同突触权重的器件中相变材料层中的各种结晶/非晶比率。实验证明了四种形式的STDP学习规则。该研究将进一步推动PCM技术在神经形态系统中的应用。（© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA，魏因海姆）
Phase‐change memory (PCM) is a promising candidate as an artificial synapse. A compact operation method to implement synaptic functions with low power consumption is critical for constructing large‐scale neuromorphic system. Here we propose a square spike strategy for implementing spike‐timing‐dependent plasticity (STDP) in PCM. Based on the heat accumulation effect in PCM, modulating the time intervals of pre‐ and post‐spikes results in different heat generation and dissipation conditions, which lead to various crystalline/ amorphous ratios in the phase change material layer in devices with diverse synaptic weights. Four forms of STDP learning rule are experimentally demonstrated. This study will further promote the development of PCM technology involved in neuromorphic systems. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)