Bright Field Structural Colors in Silicon-on-Insulator Nanostructures
Bright Field Structural Colors in Silicon-on-Insulator Nanostructures
复制标题
绝缘体上硅纳米结构中的明场结构颜色
DOI：
10.1021/acsami.0c19126
复制
发表时间：
2021-01-04
影响因子：
9.5
通讯作者：
Shi, Lina
中科院分区：
文献类型：
--
作者：
Li, Longjie;Niu, Jiebin;Shi, Lina
人工纳米结构材料的结构着色正在成为传统颜料的潜在替代品，具有高分辨率，可持续回收和长期耐用性。然而，由于非对称环境中的弱散射，利用介电纳米结构实现亮场结构色仍然是一个巨大的挑战。在这里，我们展示了在绝缘体上硅平台上具有衍射极限分辨率的全介质亮场结构色。后向散射强烈增强的建设性干涉个别Si天线和法布里-珀罗谐振支持的SiO2层之间的米氏共振。制造的颜色与不同的色调和饱和度显示出强烈的不敏感性相对于粒子间的间距，显着的，在共振条件下的视角。与创建一个准均匀的环境相比，我们的策略是固体和互补金属氧化物半导体可集成的，为结构色在纳米级彩色印刷，微显示器和成像中的实际应用铺平了道路。
Structural coloration with artificially nanostructured materials is emerging as a prospective alternative to traditional pigments for the high resolution, sustainable recycling, and long-time durability. However, achieving bright field structural colors with dielectric nanostructures remains a great challenge due to the weak scattering in an asymmetric environment. Here, we demonstrate all-dielectric bright field structural colors with diffraction-limited resolution on the silicon-on-insulator platform. The backscattering is strongly enhanced from the constructive interference between Mie resonances of individual Si antennas and Fabry-Perot resonances supported by the SiO2 layer. The fabricated colors with varying hues and saturations show strong insensitivity with respect to the interparticle spacing and, remarkably, the viewing angle under resonant conditions. Compared with creating a quasi-homogeneous environment, our strategy is solid and complementary metal-oxide semiconductor integrable, paving the way for practical applications of structural colors in nanoscale color printing, microdisplays, and imaging.