High-Q ring resonators in thin silicon-on-insulator
High-Q ring resonators in thin silicon-on-insulator
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DOI：
10.1063/1.1781355
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发表时间：
2004-10-18
影响因子：
4
通讯作者：
Scherer, A
中科院分区：
文献类型：
--
作者：
Baehr-Jones, T;Hochberg, M;Scherer, A
我们已经从薄的硅上绝缘体SOI层和测量的Q值为45 000在这些环，然后提高到57 000通过添加PMMA包层的高Q值微环。计算了波导的优化设计，并分析了波导损耗。这些高Q值谐振器有望用于电信滤波器和光源以及光学折射率传感。(C)2004年，美国物理学会。
We have fabricated high-Q microrings from thin silicon-on-insulater SOI layers and measured Q values of 45 000 in these rings, which were then improved to 57 000 by adding a PMMA cladding. The optimal waveguide designs were calculated, and the waveguide losses were analyzed. These high-Q resonators are expected to lead to interesting devices for telecommunication filters and sources as well as optical refractive index sensing. (C) 2004 American Institute of Physics.