Analytical Estimation of Effective Lifetimes of Minority Carriers Injected with Laser Pulse into Dry-Oxidized p-Type Silicon Wafer
Analytical Estimation of Effective Lifetimes of Minority Carriers Injected with Laser Pulse into Dry-Oxidized p-Type Silicon Wafer
复制标题
干氧化 p 型硅片中激光脉冲注入少数载流子有效寿命的分析估算
DOI：
10.1143/jjap.43.l1394
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发表时间：
2004
期刊：
影响因子：
--
通讯作者：
C. Munakata
中科院分区：
文献类型：
--
作者：
C. Munakata
用微波检测的光电导衰减方法测量的有效寿命与用常规光电导衰减方法获得的有效寿命相比通常出乎意料地短，特别是当存储在样品晶片表面的空间电荷层中的光载流子与样品体积中剩余的光载流子相比可以忽略不计时。在数值求解多余的光生载流子的连续性方程，它已被发现，短的有效寿命主要是由样品的表面电场和部分由相对较短的波长（905 nm）的光生载流子产生的激光束。光束的相对较短的脉冲宽度（150 ns）也一定是一个原因。
Effective lifetimes measured with the microwave-detected photoconductive decay method are often unexpectedly short compared with those obtained with the conventional photoconductive decay method, particularly when photocarriers stored in space-charge layers at the surfaces of specimen wafers are negligible compared with those remaining in the specimen volume. On numerically resolving the continuity equation for excess photocarriers, it has been found that the short effective lifetimes are caused mainly by the surface electric fields of the specimens and partly by the relatively short wavelength (905 nm) of the photocarrier-generating laser beam. The comparatively short pulse width (150 ns) of the beam must also be a cause.