Performance analysis of the segment npn anode LIGBT
Performance analysis of the segment npn anode LIGBT
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DOI：
10.1109/ted.2005.857168
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发表时间：
2005-10
影响因子：
3.1
通讯作者：
D. Green;M. Sweet;K. Vershinin;S. Hardikar;E. Narayanan
中科院分区：
文献类型：
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作者：
D. Green;M. Sweet;K. Vershinin;S. Hardikar;E. Narayanan
The performance of a high-voltage lateral insulated gate bipolar transistor (LIGBTs) with segmented n+p/n anode fabricated in junction isolation technology is experimentally investigated at both room and elevated temperatures. Detailed two dimensional numerical modeling of a vertical representation of the structure shows that significant electron current passes through the n/sup +/p/n segment of the anode region during the on-state and when devices are subjected to clamped inductive switching. It is shown that the magnitude of electron current can be controlled by modifying the p-base charge which enables enhancement of the turn-off loss/forward voltage drop tradeoff in comparison to conventional LIGBTs.
