Redox agent enhanced chemical mechanical polishing of thin film diamond
Redox agent enhanced chemical mechanical polishing of thin film diamond
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DOI：
10.1016/j.carbon.2017.12.077
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发表时间：
2018-01
期刊：
影响因子：
10.9
通讯作者：
S. Mandal;E. Thomas;L. Ginés;D. Morgan;J. Green;E. Brousseau;O. Williams
中科院分区：
文献类型：
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作者：
S. Mandal;E. Thomas;L. Ginés;D. Morgan;J. Green;E. Brousseau;O. Williams
通过在碱性SF_1抛光液中加入不同的氧化还原剂，研究了金刚石化学机械抛光的化学性质。三种氧化剂，即过氧化氢，高锰酸钾和硝酸铁，和两种还原剂，草酸和硫代硫酸钠，添加到SF1浆料。草酸产生最快的抛光速率，而过氧化氢对抛光的影响很小，可能是由于其挥发性。X射线光电子能谱（XPS）显示，使用不同抛光液抛光的样品表面氧含量差异不大。这表明氧化还原剂的添加不增加表面上含氧物质的密度，但加速浆料颗粒内的Si或O原子附着和去除到金刚石表面的过程。
The chemical nature of the chemical mechanical polishing of diamond has been examined by adding various redox agents to an alkaline SF1 polishing slurry. Three oxidizing agents, namely hydrogen peroxide, potassium permanganate and ferric nitrate, and two reducing agents, oxalic acid and sodium thiosulfate, were added to the SF1 slurry. Oxalic acid produced the fastest polishing rate while hydrogen peroxide had very little effect on polishing, probably due to its volatile nature. X-ray photoelectron spectroscopy (XPS) reveals little difference in the surface oxygen content on thesamples polished using various slurries. This suggests that the addition of redox agents do not increase the density of oxygen containing species on the surface but accelerate the process of attachment and removal of Si or O atoms within the slurry particles to the diamond surface.