Exposure of 38 nm period grating patterns with extreme ultraviolet interferometric lithography
Exposure of 38 nm period grating patterns with extreme ultraviolet interferometric lithography
复制标题
使用极紫外干涉光刻技术曝光 38 nm 周期光栅图案
DOI：
10.1063/1.125005
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发表时间：
1999
影响因子：
4
通讯作者：
P. Nealey
中科院分区：
文献类型：
--
作者：
H. Solak;D. He;Wei;S. Singh;F. Cerrina;B. Sohn;Xiaoming Yang;P. Nealey
极紫外（EUV，λ=13 nm）光刻被认为是继紫外（光学）光刻之后最有可能的技术。 其中一个具有挑战性的方面是开发合适的抗蚀剂材料和工艺。这种发展需要能够产生高分辨率的图案。到目前为止，这种能力由于缺乏光源和成像系统而受到严重限制。报道了用极紫外光干涉光刻技术印制周期为38 nm的光栅图形。使用劳埃德反射镜干涉仪，用反射镜以掠入射方式反射入射光束的一部分，并使其在晶片平面处与直射光束干涉。高密度的条纹（38纳米间距）很容易产生。来自电子储存环中的波荡器的13 nm波长的单色光提供了必要的时间和空间相干性沿着具有足够的强度通量。这种简单的技术可以扩展到10 nm以下的分辨率。
Extreme ultraviolet (EUV, λ=13 nm) lithography is considered to be the most likely technology to follow ultraviolet (optical) lithography. One of the challenging aspects is the development of suitable resist materials and processes. This development requires the ability to produce high-resolution patterns. Until now, this ability has been severely limited by the lack of sources and imaging systems. We report printing of 38 nm period grating patterns by interferometric lithography technique with EUV light. A Lloyd’s Mirror interferometer was used, reflecting part of an incident beam with a mirror at grazing incidence and letting it interfere with the direct beam at the wafer plane. High-density fringes (38 nm pitch) were easily produced. Monochromatized light of 13 nm wavelength from an undulator in an electron storage ring provided the necessary temporal and spatial coherence along with sufficient intensity flux. This simple technique can be extended to sub-10 nm resolution.