Plasmonic Optoelectronic Memristor Enabling Fully Light‐Modulated Synaptic Plasticity for Neuromorphic Vision (Adv. Sci. 6/2022)
Plasmonic Optoelectronic Memristor Enabling Fully Light‐Modulated Synaptic Plasticity for Neuromorphic Vision (Adv. Sci. 6/2022)
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等离激元光电忆阻器实现完全光调制的神经形态视觉突触可塑性（Adv. Sci. 6/2022）
DOI：
10.1002/advs.202270034
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发表时间：
2022-02
期刊：
影响因子：
15.1
通讯作者：
Yichun Liu
中科院分区：
文献类型：
--
作者：
Xuanyu Shan;Chenyi Zhao;Xinnong Wang;Zhongqiang Wang;Shencheng Fu;Ya Lin;Tao Zeng;Xiaoning Zhao;Haiyang Xu;Xintong Zhang;Yichun Liu
等离子体光电忆阻器在文章编号2104632中，Zhongqiang Wang，Haiyang Xu，Yichun Liu及其同事报告了一种用于神经形态视觉的新型等离子体光电忆阻器，其中使用可见光和紫外光刺激证明了完全光调制的突触可塑性。这种忆阻器能够在单个设备中组合传感和图像预处理功能，这可能会促进未来高效神经形态视觉的发展。
Plasmonic Optoelectronic Memristors In article number 2104632, Zhongqiang Wang, Haiyang Xu, Yichun Liu, and co‐workers report a new type of plasmonic optoelectronic memristor for neuromorphic vision, in which the fully light‐modulated synaptic plasticity is demonstrated using visible and ultraviolet light stimulations. This memristor enables the combination of sensing and image pre‐processing functions in a single device, which may promote the future development of efficient neuromorphic vision.