EQUIVALENT-CIRCUIT MODEL IN GRAIN-BOUNDARY BARRIER LAYER CAPACITORS
EQUIVALENT-CIRCUIT MODEL IN GRAIN-BOUNDARY BARRIER LAYER CAPACITORS
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DOI：
10.1111/j.1151-2916.1989.tb06008.x
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发表时间：
1989-10-01
影响因子：
3.9
通讯作者：
CHANG, PH
中科院分区：
文献类型：
--
作者：
CHIOU, BS;LIN, ST;CHANG, PH
研究了钛酸钡基电容器的电性能。提出了一种新的模型来解释晶界势垒层（GBBL）电容器阻抗的频率响应。该模型考虑了偶极极化效应，为评估不同掺杂和不同气氛烧结的GBBL电容器性能提供了一种简单有效的方法。当在还原气氛中烧结时，掺杂BaTiO 3表现出较高的介电常数和相对稳定的介电常数相对于频率响应和温度依赖性。同时添加Dy_2O_3和Nb_2O_5，晶粒电阻率减小。
Electrical properties of BaTiO3‐based capacitors are investigated. A new model is developed to explain the frequency response of the impedance of grain‐boundary barrier layer (GBBL) capacitors. This model takes into consideration the dipole polarization effect and provides a simple and effective approach to evaluate the performance of GBBL capacitors with various dopants and sintering in different atmospheres. When sintered in a reducing atmosphere, doped BaTiO3exhibits a higher dielectric constant and a relatively stable dieletric constant with respect to the frequency response and temperature dependence. Also, smaller grain resistivity is obtained with addition of both Dy2O3and Nb2O5.