Conductivity change of defective graphene by helium ion beams
Conductivity change of defective graphene by helium ion beams
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DOI：
10.1063/1.4979983
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发表时间：
2017-04
期刊：
影响因子：
1.6
通讯作者：
Y. Naitou;S. Ogawa
中科院分区：
文献类型：
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作者：
Y. Naitou;S. Ogawa
应用最近开发的氦离子显微镜，我们演示了 SiO2/Si 基底上的单层石墨烯 (SLG) 的直接纳米图案化和安德森定位。在这项研究中，我们阐明了SLG直接纳米图案化的空间分辨率限制因素。扫描电容显微镜测量结果分析表明，氦离子（H+）照射的SLG纳米结构的电导率取决于其几何尺寸，即H+照射的SLG区域越小，其电导率就越高。这一发现可以通过跨越有缺陷的 SLG 的强局域化状态的跳跃载流子传输来解释。
Applying a recently developed helium ion microscope, we demonstrated direct nano-patterning and Anderson localization of single-layer graphene (SLG) on SiO2/Si substrates. In this study, we clarified the spatial-resolution-limitation factor of direct nano-patterning of SLG. Analysis of scanning capacitance microscopy measurements reveals that the conductivity of helium ion (H+)-irradiated SLG nanostructures depends on their geometrical size, i.e., the smaller the H+-irradiated SLG region, the higher its conductivity becomes. This finding can be explained by the hopping carrier transport across strongly localized states of defective SLG.