Organic transistors manufactured using inkjet technology with subfemtoliter accuracy
Organic transistors manufactured using inkjet technology with subfemtoliter accuracy
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DOI：
10.1073/pnas.0708340105
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发表时间：
2008-04-01
影响因子：
11.1
通讯作者：
Someya, Takao
中科院分区：
文献类型：
--
作者：
Sekitani, Tsuyoshi;Noguchi, Yoshiaki;Someya, Takao
开发用于大面积传感器、显示器和电路应用的有机晶体管的主要障碍是制造效率、晶体管性能和功耗之间的基本折衷。过去，通过使用印刷技术来提高制造效率不可避免地导致显著降低的性能和增加的功耗，而提高性能或降低功耗的尝试导致更高的工艺温度和增加的制造成本。在这里，我们通过演示亚飞秒喷墨打印来消除这一基本限制，以在高迁移率有机半导体表面上定义具有单微米分辨率的金属接触，从而创建高性能p沟道和n沟道晶体管以及低功耗互补电路。晶体管采用基于自组装单层的超低温栅极电介质，允许刚性和柔性衬底上的晶体管和电路在非常低的电压下工作。
A major obstacle to the development of organic transistors for large-area sensor, display, and circuit applications is the fundamental compromise between manufacturing efficiency, transistor performance, and power consumption. In the past, improving the manufacturing efficiency through the use of printing techniques has inevitably resulted in significantly lower performance and increased power consumption, while attempts to improve performance or reduce power have led to higher process temperatures and increased manufacturing cost. Here, we lift this fundamental limitation by demonstrating subfemtoliter inkjet printing to define metal contacts with single-micrometer resolution on the surface of high-mobility organic semiconductors to create high-performance p-channel and n-channel transistors and low-power complementary circuits. The transistors employ an ultrathin low-temperature gate dielectric based on a self-assembled monolayer that allows transistors and circuits on rigid and flexible substrates to operate with very low voltages.