Temperature dependences of the nonradiative multiphonon carrier capture and ejection properties of deep traps in semiconductors. I. Theoretical results
Temperature dependences of the nonradiative multiphonon carrier capture and ejection properties of deep traps in semiconductors. I. Theoretical results
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半导体深陷阱非辐射多声子载流子捕获和喷射特性的温度依赖性。
DOI：
10.1002/pssb.2220850122
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发表时间：
1978
影响因子：
1.6
通讯作者：
R. Pässler
中科院分区：
文献类型：
--
作者：
R. Pässler
本文从新近发展起来的Shockley-Read过程半经验理论出发，对半导体深陷阱的无辐射多声子载流子俘获和发射特性随温度的变化进行了理论预测。在低温下，相应的俘获截面对温度的依赖性很弱，在吸引、中性和排斥的情况下分别为T−1、T−1/2和T−7/6× × exp {−3[θ/T]1/3}，其中参数θ取决于中心电荷的大小。在高温下，激活类型依赖性exp {− U/kT}起着重要的作用，其中激活能U取决于给定陷阱的实际结构。在完整理论的基础上，用图形显示了中温范围内俘获截面和喷射频率因子随温度的变化关系。
[俄语文本被忽略]。
Proceeding from the recently developed semiempirical theory of Shockley-Read processes a short survey of theoretical predictions is given on the temperature dependences of the nonradiative multiphonon carrier capture ejection properties of deep traps in semiconductors. At low temperatures the corresponding capture cross-sections are but weakly dependent on temperature and vary in the cases of attraction, neutrality, and repulsion as T−1, T−1/2, and T−7/6× × exp {−3[θ/T]1/3}, respectively, where the parameter θ depends on the magnitude of the centre charge. At high temperatures, activation-type dependences exp {− U/kT} play an important part where the activation energies U depend on the actual structure of the given traps. On the basis of the complete theory the temperature dependences of the capture cross-sections and ejection frequency factors in the range of intermediate temperatures are visualized graphically.
[Russian Text Ignored].